Pictures for reference only, please check the datasheet
IPN65R1K5CEATMA1
Manufacturer:
Mfr. Part #:
IPN65R1K5CEATMA1
Allchips #:
R001-IPN65R1K5CEATMA1-1-H-2203-X-N
Description:
Trans MOSFET N-CH 650V 5.2A 3-Pin SOT-223 T/R
ECAD Model:
Delivery:
Payment:
PayPal, Credit Card, Wire Transfer, Western Union
In stock
- IPN65R1K5CEATMA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Infineon,IPN65R1K5CEATMA1 is available at Allchips.100% original and new guarantee. If
comprehensive data for IPN65R1K5CEATMA1 to optimize the supply chain, including costdown, time-saving, cross
references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected,
please contact our professional team.
Specification
| RoHS | yes |
| Technology | Si |
| Installation style | SMD/SMT |
| Package / case | SOT-223-4 |
| Number of channels | 1 Channel |
| Transistor polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Id - continuous drain current | 5.3 A |
| Rds On - Drain-Source On-Resistance | 3.51 Ohms |
| Vgs th - gate-source threshold voltage | 2.5 V |
| Vgs - gate-source voltage | 20 V |
| Qg - gate charge | 10.5 nC |
| Minimum working temperature | - 40 C |
| The maximum working temperature | + 150 C |
| Configuration | Single |
| Channel mode | Enhancement |
| Fall time | 18.2 ns |
| Height | 1.6 mm |
| Length | 6.5 mm |
| Pd - Power Dissipation | 5 W |
| Rise Time | 5.9 ns |
| Series | CoolMOS CE |
| Factory packing quantity | 3000 |
| Transistor type | 1 N-Channel |
| Typical shutdown delay time | 33 ns |
| Typical turn-on delay time | 7.7 ns |
| Width | 3.5 mm |
| Unit weight | 112 mg |
Others include "IPN65R1K5CEATMA1" parts
The following parts include 'IPN65R1K5CEATMA1'
IPN65R1K5CEATMA1 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IPN65R1K5CEATMA1
Infineon
CONSUMER
Learn More >
-
View All Newest Products from Omron
