IPN70R1K2P7SATMA1
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Specification
封装 | SOT-223-3 |
Id-连续漏极电流 | 4.5 A |
晶体管极性 | MOSFET |
Vgs - 栅极-源极电压 | 16 V |
Qg-栅极电荷 | 4.8 nC |
Pd-功率耗散 | 6.3 W |
Rds On-漏源导通电阻 | 980 mOhms |
Vds-漏源极击穿电压 | 700 V |
工作温度范围 | - 40 C~+ 150 C |
安装方式 | SMD/SMT |
电路数量 | 1 Channel |
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