HGTP20N60A4
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Specification
封装 | TO-220-3 |
安装方式 | 通孔 |
Vgs - 栅极-源极电压 | 15ns/73ns |
Pd-功率耗散 | 290W |
晶体管极性 | ,晶体管-UGBT,MOSFET-单 |
工作温度范围 | -55°C~150°C(TJ) |
Vds-漏源极击穿电压 | 600V |
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Trans IGBT Chip N-CH 600V 70A 290W 3-Pin(3+Tab) TO-220 Tube
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