IPP041N12N3 G
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Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-220-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 120 V |
Id - continuous drain current | 120 A |
Rds On - Drain-Source On-Resistance | 3.5 mOhms |
Vgs th - gate-source threshold voltage | 2 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 211 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 21 ns |
Forward transconductance - minimum | 83 S |
Height | 15.65 mm |
Length | 10 mm |
Pd - Power Dissipation | 300 W |
Rise Time | 52 ns |
Series | OptiMOS 3 |
Factory packing quantity | 500 |
Transistor type | 1 N-Channel |
Types | OptiMOS 3 Power-Transistor |
Typical shutdown delay time | 70 ns |
Typical turn-on delay time | 35 ns |
Width | 4.4 mm |
Unit weight | 6 g |
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