IPP057N06N3GXKSA1
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Specification
Rds On-漏源导通电阻 | 4.7 mOhms |
Vgs - 栅极-源极电压 | 20 V |
Qg-栅极电荷 | 82 nC |
高度 | 15.65 mm |
Vds-漏源极击穿电压 | 60 V |
工作温度范围 | - 55 C~+ 175 C |
安装方式 | Through Hole |
电路数量 | 1 Channel |
长度 | 10 mm |
宽度 | 4.4 mm |
封装 | TO-220-3 |
Id-连续漏极电流 | 80 A |
Pd-功率耗散 | 115 W |
晶体管极性 | MOSFET |
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