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IPP65R150CFDAAKSA1
Manufacturer:
Mfr. Part #:
IPP65R150CFDAAKSA1
Allchips #:
R001-IPP65R150CFDAAKSA1-1-H-0000-X-Y
Description:
通孔 N 通道 650V 22.4A（Tc） 195.3W（Tc） PG-TO220-3
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Specification
| RoHS | yes |
| Technology | Si |
| Installation style | Through Hole |
| Package / case | TO-220-3 |
| Number of channels | 1 Channel |
| Transistor polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Id - continuous drain current | 22.4 A |
| Rds On - Drain-Source On-Resistance | 135 mOhms |
| Vgs th - gate-source threshold voltage | 3.5 V |
| Vgs - gate-source voltage | 20 V |
| Qg - gate charge | 86 nC |
| Minimum working temperature | - 40 C |
| The maximum working temperature | + 150 C |
| Configuration | Single |
| Channel mode | Enhancement |
| Fall time | 5.6 ns |
| Height | 15.65 mm |
| Length | 10 mm |
| Pd - Power Dissipation | 195.3 W |
| Rise Time | 7.6 ns |
| Series | CoolMOS CFDA |
| Factory packing quantity | 500 |
| Transistor type | 1 N-Channel |
| Typical shutdown delay time | 52.8 ns |
| Typical turn-on delay time | 12.4 ns |
| Width | 4.4 mm |
| Unit weight | 6 g |
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