IPT015N10N5
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Specification
Vds-漏源极击穿电压 | 100V |
Vgs - 栅极-源极电压 | 3.8V @ 250uA |
封装 | PG-HSOF-8 |
晶体管极性 | N沟道 |
Pd-功率耗散 | 375W |
Rds On-漏源导通电阻 | 1.5mΩ @ 150A,10V |
Id-连续漏极电流 | 300A |
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