IPT65R195G7XTMA1
In stock
- IPT65R195G7XTMA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
安装方式 | SMD/SMT |
Vds-漏源极击穿电压 | 650 V |
Rds On-漏源导通电阻 | 424 mOhms |
晶体管极性 | MOSFET |
封装 | HSOF-8 |
Qg-栅极电荷 | 20 nC |
高度 | 2.4 mm |
Pd-功率耗散 | 97 W |
电路数量 | 1 Channel |
Id-连续漏极电流 | 14 A |
工作温度范围 | - 55 C~+ 150 C |
Vgs - 栅极-源极电压 | 30 V |
长度 | 10.58 mm |
宽度 | 10.1 mm |
Others include "IPT65R195G7XTMA1" parts
The following parts include 'IPT65R195G7XTMA1'
IPT65R195G7XTMA1 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IPT65R195G7XTMA1
Infineon
Trans MOSFET N-CH 650V 14A 9-Pin(8+Tab) HSOF T/R
Learn More >
-
-
-
IPT65R195G7XTMA1
Infineon
Trans MOSFET N-CH 650V 14A 9-Pin(8+Tab) HSOF T/R
Learn More >
-
- View All Newest Products from Omron