IPT65R195G7XTMA1
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Specification
安装方式 | SMD/SMT |
Vds-漏源极击穿电压 | 650 V |
Id-连续漏极电流 | 14 A |
Rds On-漏源导通电阻 | 424 mOhms |
晶体管极性 | MOSFET |
封装 | HSOF-8 |
Qg-栅极电荷 | 20 nC |
高度 | 2.4 mm |
Pd-功率耗散 | 97 W |
电路数量 | 1 Channel |
工作温度范围 | - 55 C~+ 150 C |
Vgs - 栅极-源极电压 | 30 V |
长度 | 10.58 mm |
宽度 | 10.1 mm |
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