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IPU60R950C6AKMA1
Manufacturer:
Mfr. Part #:
IPU60R950C6AKMA1
Allchips #:
R001-IPU60R950C6AKMA1-1-H-1801-X-N
Description:
Trans MOSFET N-CH 600V 4.4A 3-Pin(3+Tab) TO-251 Tube
ECAD Model:
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Specification
| RoHS | yes |
| Technology | Si |
| Installation style | Through Hole |
| Package / case | TO-251-3 |
| Number of channels | 1 Channel |
| Transistor polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Id - continuous drain current | 4.4 A |
| Rds On - Drain-Source On-Resistance | 860 mOhms |
| Vgs th - gate-source threshold voltage | 3 V |
| Vgs - gate-source voltage | 20 V |
| Qg - gate charge | 13 nC |
| Minimum working temperature | - 55 C |
| The maximum working temperature | + 150 C |
| Configuration | Single |
| Qualifications | AEC-Q100 |
| Channel mode | Enhancement |
| Development Kit | - |
| Fall time | 13 ns |
| Forward transconductance - minimum | - |
| Height | 6.22 mm |
| Length | 6.73 mm |
| Pd - Power Dissipation | 37 W |
| Rise Time | 8 ns |
| Series | CoolMOS C6 |
| Factory packing quantity | 1500 |
| Transistor type | 1 N-Channel |
| Typical shutdown delay time | 60 ns |
| Typical turn-on delay time | 10 ns |
| Width | 2.38 mm |
| Unit weight | 4 g |
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