IPZ40N04S58R4ATMA1
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TSDSON-8 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 40 V |
Id - continuous drain current | 40 A |
Rds On - Drain-Source On-Resistance | 7 mOhms |
Vgs th - gate-source threshold voltage | 2.2 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 13.7 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Single |
Qualifications | AEC-Q100 |
Channel mode | Enhancement |
Fall time | 2 ns |
Height | 1 mm |
Length | 3.3 mm |
Pd - Power Dissipation | 34 W |
Rise Time | 2 ns |
Factory packing quantity | 5000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 3 ns |
Typical turn-on delay time | 3 ns |
Width | 3.3 mm |
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