IPZ40N04S58R4ATMA1
In stock
- IPZ40N04S58R4ATMA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TSDSON-8 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 40 V |
Id - continuous drain current | 40 A |
Rds On - Drain-Source On-Resistance | 7 mOhms |
Vgs th - gate-source threshold voltage | 2.2 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 13.7 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Single |
Qualifications | AEC-Q100 |
Channel mode | Enhancement |
Fall time | 2 ns |
Height | 1 mm |
Length | 3.3 mm |
Pd - Power Dissipation | 34 W |
Rise Time | 2 ns |
Factory packing quantity | 5000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 3 ns |
Typical turn-on delay time | 3 ns |
Width | 3.3 mm |
Others include "IPZ40N04S58R4ATMA1" parts
The following parts include 'IPZ40N04S58R4ATMA1'
IPZ40N04S58R4ATMA1 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IPZ40N04S58R4ATMA1
Analog Devices Inc
Learn More >
-
-
-
IPZ40N04S58R4ATMA1
Infineon
Trans MOSFET N-CH 40V 40A Automotive AEC-Q101 8-Pin TSDSON EP T/R
Learn More >
-
-
-
IPZ40N04S58R4ATMA1
Infineon
表面贴装型 N 通道 40V 40A(Tc) 34W(Tc) PG-TSDSON-8-32
Learn More >
-
- View All Newest Products from Omron