IRF5802TRPBF
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Specification
Pd-功率耗散 | 2 W |
封装 | TSOP-6 |
工作温度范围 | - 55 C~+ 150 C |
晶体管极性 | MOSFET |
安装方式 | SMD/SMT |
Rds On-漏源导通电阻 | 1.2 Ohms |
Id-连续漏极电流 | 900 mA |
Vgs - 栅极-源极电压 | 30 V |
Vds-漏源极击穿电压 | 150 V |
长度 | 3 mm |
宽度 | 1.5 mm |
Qg-栅极电荷 | 4.5 nC |
高度 | 1.1 mm |
电路数量 | 1 Channel |
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