IRF6614TRPBF
Manufacturer:
Mfr. Part #:
IRF6614TRPBF
Allchips #:
R001-IRF6614TRPBF-1-H-0000-X-Y
Description:
N沟道,40V,12.7A,8.3mΩ@10V
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | DirectFET-ST |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 40 V |
Id - continuous drain current | 12.7 A |
Rds On - Drain-Source On-Resistance | 7.1 mOhms |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 19 nC |
Configuration | Single |
Height | 0.7 mm |
Length | 4.85 mm |
Pd - Power Dissipation | 42 W |
Factory packing quantity | 4800 |
Transistor type | 1 N-Channel |
Width | 3.95 mm |
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