IRF6646TRPBF
In stock
- IRF6646TRPBF Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | DirectFET-MN |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 80 V |
Id - continuous drain current | 12 A |
Rds On - Drain-Source On-Resistance | 7.6 mOhms |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 36 nC |
Minimum working temperature | - 40 C |
The maximum working temperature | + 150 C |
Configuration | Single Quad Drain Dual Source |
Channel mode | Enhancement |
Fall time | 12 ns |
Height | 0.7 mm |
Length | 6.35 mm |
Pd - Power Dissipation | 89 W |
Rise Time | 20 ns |
Factory packing quantity | 4800 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 31 ns |
Typical turn-on delay time | 17 ns |
Width | 5.05 mm |
Others include "IRF6646TRPBF" parts
The following parts include 'IRF6646TRPBF'
IRF6646TRPBF Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IRF6646TRPBF
Infineon
Trans MOSFET N-CH Si 80V 12A 7-Pin Direct-FET MN T/R
Learn More >
-
-
-
IRF6646TRPBF
Infineon
Learn More >
-
-
-
IRF6646TRPBF
Infineon
Trans MOSFET N-CH Si 80V 12A 7-Pin Direct-FET MN T/R
Learn More >
-
- View All Newest Products from Omron