IRF6775MTRPBF
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Specification
封装 | DirectFET-MZ |
Vds-漏源极击穿电压 | 150 V |
Pd-功率耗散 | 89 W |
Qg-栅极电荷 | 25 nC |
高度 | 0.7 mm |
工作温度范围 | - 40 C~+ 150 C |
电路数量 | 1 Channel |
Id-连续漏极电流 | 28 A |
安装方式 | SMD/SMT |
Vgs - 栅极-源极电压 | 20 V |
长度 | 6.35 mm |
宽度 | 5.05 mm |
Rds On-漏源导通电阻 | 47 mOhms |
晶体管极性 | MOSFET |
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