IRF7402TRPBF
In stock
- IRF7402TRPBF Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SO-8 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 20 V |
Id - continuous drain current | 6.8 A |
Rds On - Drain-Source On-Resistance | 35 mOhms |
Vgs th - gate-source threshold voltage | 0.7 V |
Vgs - gate-source voltage | 12 V |
Qg - gate charge | 14 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Fall time | 32 ns |
Forward transconductance - minimum | 6.1 S |
Height | 1.75 mm |
Length | 4.9 mm |
Pd - Power Dissipation | 2.5 W |
Rise Time | 47 ns |
Factory packing quantity | 4000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 24 ns |
Typical turn-on delay time | 5.1 ns |
Width | 3.9 mm |
Unit weight | 506.600 mg |
Others include "IRF7402TRPBF" parts
The following parts include 'IRF7402TRPBF'
IRF7402TRPBF Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IRF7402TRPBF
Infineon
N沟道,20V,6.8A(Ta)
Learn More >
-
-
-
IRF7402TRPBF
Infineon
N沟道,20V,6.8A(Ta)
Learn More >
-
- View All Newest Products from Omron