SPA06N60C3
Manufacturer:
Mfr. Part #:
SPA06N60C3
Allchips #:
R001-SPA06N60C3-1-H-2021/12/23-X-Y
Description:
N沟道,650V,6.2A,750mΩ@10V
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Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-220FP-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 600 V |
Id - continuous drain current | 6.2 A |
Rds On - Drain-Source On-Resistance | 750 mOhms |
Vgs - gate-source voltage | 20 V |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 10 ns |
Height | 16.15 mm |
Length | 10.65 mm |
Pd - Power Dissipation | 32 W |
Rise Time | 12 ns |
Series | CoolMOS C3 |
Factory packing quantity | 500 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 52 ns |
Typical turn-on delay time | 7 ns |
Width | 4.85 mm |
Unit weight | 6 g |
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SPA06N60C3
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N沟道,650V,6.2A,750mΩ@10V
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