IRF7749L1TRPBF
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | DirectFET-L8 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 60 V |
Id - continuous drain current | 200 A |
Rds On - Drain-Source On-Resistance | 1.1 mOhms |
Vgs th - gate-source threshold voltage | 2.9 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 200 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Single Hex Drain Octal Source |
Fall time | 39 ns |
Forward transconductance - minimum | 280 S |
Height | 0.74 mm |
Length | 9.15 mm |
Pd - Power Dissipation | 125 W |
Rise Time | 43 ns |
Factory packing quantity | 4000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 78 ns |
Typical turn-on delay time | 17 ns |
Width | 7.1 mm |
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