IRFB38N20DPBF
In stock
- IRFB38N20DPBF Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-220-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 200 V |
Id - continuous drain current | 44 A |
Rds On - Drain-Source On-Resistance | 54 mOhms |
Vgs - gate-source voltage | 30 V |
Qg - gate charge | 60 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 47 ns |
Forward transconductance - minimum | 17 S |
Height | 15.65 mm |
Length | 10 mm |
Pd - Power Dissipation | 320 W |
Rise Time | 95 ns |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 29 ns |
Typical turn-on delay time | 16 ns |
Width | 4.4 mm |
Unit weight | 6 g |
Others include "IRFB38N20DPBF" parts
The following parts include 'IRFB38N20DPBF'
IRFB38N20DPBF Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IRFB38N20DPBF
Infineon
Trans MOSFET N-CH 200V 43A 3-Pin(3+Tab) TO-220AB Tube
Learn More >
-
-
-
IRFB38N20DPBF
Infineon
Trans MOSFET N-CH 200V 43A 3-Pin(3+Tab) TO-220AB Tube
Learn More >
-
-
-
IRFB38N20DPBF
Infineon
N沟道 200V 43A
Learn More >
-
-
-
IRFB38N20DPBF
Infineon
N沟道 200V 43A
Learn More >
-
- View All Newest Products from Omron