IRFB42N20DPBF
In stock
- IRFB42N20DPBF Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-220-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 200 V |
Id - continuous drain current | 44 A |
Rds On - Drain-Source On-Resistance | 55 mOhms |
Vgs th - gate-source threshold voltage | 5.5 V |
Vgs - gate-source voltage | 30 V |
Qg - gate charge | 91 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 32 ns |
Forward transconductance - minimum | 21 S |
Height | 15.65 mm |
Length | 10 mm |
Pd - Power Dissipation | 2.4 W |
Rise Time | 69 ns |
Factory packing quantity | 50 |
Transistor type | 1 N-Channel |
Types | Smps MOSFET |
Typical shutdown delay time | 29 ns |
Typical turn-on delay time | 18 ns |
Width | 4.4 mm |
Unit weight | 6 g |
Others include "IRFB42N20DPBF" parts
The following parts include 'IRFB42N20DPBF'
IRFB42N20DPBF Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IRFB42N20DPBF
Infineon
通孔 N 通道 200V 44A(Tc) 2.4W(Ta),330W(Tc) TO-220AB
Learn More >
-
- View All Newest Products from Omron