IRFH3702TRPBF
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | PQFN-8 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 30 V |
Id - continuous drain current | 42 A |
Rds On - Drain-Source On-Resistance | 7.1 mOhms |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 9.6 nC |
Configuration | Single |
Height | 1 mm |
Length | 6 mm |
Pd - Power Dissipation | 2.8 W |
Factory packing quantity | 4000 |
Transistor type | 1 N-Channel |
Width | 5 mm |
IRFH3702TRPBF Documents
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表面贴装型 N 通道 30V 16A(Ta),42A(Tc) 2.8W(Ta) 8-PQFN(3x3)
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表面贴装型 N 通道 30V 16A(Ta),42A(Tc) 2.8W(Ta) 8-PQFN(3x3)
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