IRFH5215TRPBF
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | PQFN-8 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 150 V |
Id - continuous drain current | 27 A |
Rds On - Drain-Source On-Resistance | 58 mOhms |
Vgs th - gate-source threshold voltage | 5 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 21 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Fall time | 2.9 ns |
Forward transconductance - minimum | 21 S |
Height | 0.83 mm |
Length | 6 mm |
Pd - Power Dissipation | 3.6 W |
Rise Time | 6.3 ns |
Factory packing quantity | 4000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 11 ns |
Typical turn-on delay time | 6.7 ns |
Width | 5 mm |
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IRFH5215TRPBF
Infineon
表面贴装型 N 通道 150V 5A(Ta),27A(Tc) 3.6W(Ta),104W(Tc) PQFN(5x6)
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IRFH5215TRPBF
Infineon
表面贴装型 N 通道 150V 5A(Ta),27A(Tc) 3.6W(Ta),104W(Tc) PQFN(5x6)
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