IRFU220NPBF
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Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-251-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 200 V |
Id - continuous drain current | 5 A |
Rds On - Drain-Source On-Resistance | 600 mOhms |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 15 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 12 ns |
Forward transconductance - minimum | 2.6 S |
Height | 6.22 mm |
Length | 6.73 mm |
Pd - Power Dissipation | 43 W |
Rise Time | 11 ns |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 20 ns |
Typical turn-on delay time | 6.4 ns |
Width | 2.38 mm |
Unit weight | 4 g |
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