IRG8P08N120KD-EPBF
Manufacturer:
Mfr. Part #:
IRG8P08N120KD-EPBF
Allchips #:
R001-IRG8P08N120KD-EPBF-1-H-1801-X-N
Description:
Trans IGBT Chip N-CH 1200V 15A 89000mW 3-Pin(3+Tab) TO-247AD Tube
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Specification
RoHS | yes |
Technology | Si |
Package / case | TO-247AD-3 |
Installation style | Through Hole |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 1200 V |
Collector - emitter saturation voltage | 1.7 V |
Gate / emitter maximum voltage | 30 V |
Continuous collector current at 25 ° C | 15 A |
Pd - Power Dissipation | 89 W |
Minimum working temperature | - 40 C |
The maximum working temperature | + 150 C |
Collector maximum continuous current Ic | 8 A |
Gate-emitter leakage current | 100 nA |
Factory packing quantity | 25 |
Unit weight | 6.500 g |
IRG8P08N120KD-EPBF Releted Information
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