IRGR2B60KDPBF
Manufacturer:
Mfr. Part #:
IRGR2B60KDPBF
Allchips #:
R001-IRGR2B60KDPBF-1-H-1401-X-N
Description:
Trans IGBT Chip N-CH 600V 6.3A 35W 3-Pin(2+Tab) DPAK Tube
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Specification
RoHS | yes |
Technology | Si |
Package / case | TO-252-3 |
Installation style | SMD/SMT |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 600 V |
Collector - emitter saturation voltage | 1.95 V |
Gate / emitter maximum voltage | +/- 20 V |
Continuous collector current at 25 ° C | 6.3 A |
Pd - Power Dissipation | 35 W |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Series | RC |
Gate-emitter leakage current | 100 nA |
Height | 4.57 mm |
Length | 10.31 mm |
Factory packing quantity | 75 |
Width | 9.45 mm |
Unit weight | 1 g |
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