IRLR120NTRPBF
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Specification
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
Pd-功率耗散 | 39 W |
高度 | 2.3 mm |
Id-连续漏极电流 | 11 A |
晶体管极性 | HEXFET Power MOSFET |
封装 | TO-252-2(DPAK) |
Qg-栅极电荷 | 13.3 nC |
长度 | 6.5 mm |
工作温度范围 | - 55 C~+ 175 C |
宽度 | 6.22 mm |
Vgs - 栅极-源极电压 | 16 V |
Vds-漏源极击穿电压 | 100 V |
Rds On-漏源导通电阻 | 265 mOhms |
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