SPD08P06PGBTMA1
In stock
- SPD08P06PGBTMA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
Vgs - 栅极-源极电压 | 20 V |
Vds-漏源极击穿电压 | 60 V |
Id-连续漏极电流 | 8.83 A |
Pd-功率耗散 | 42 W |
Qg-栅极电荷 | - 13 nC |
高度 | 2.3 mm |
宽度 | 6.22 mm |
封装 | TO-252-3 |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
资格等级 | AEC-Q101 |
长度 | 6.5 mm |
工作温度范围 | - 55 C~+ 175 C |
晶体管极性 | MOSFET |
Rds On-漏源导通电阻 | 230 mOhms |
Others include "SPD08P06PGBTMA1" parts
The following parts include 'SPD08P06PGBTMA1'
SPD08P06PGBTMA1 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
SPD08P06PGBTMA1
Analog Devices Inc
Learn More >
-
-
-
SPD08P06PGBTMA1
Infineon
Trans MOSFET P-CH 60V 8.83A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
Learn More >
-
-
-
SPD08P06PGBTMA1
Infineon
Trans MOSFET P-CH 60V 8.83A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
Learn More >
-
-
-
SPD08P06PGBTMA1
Infineon
Learn More >
-
-
-
SPD08P06PGBTMA1
Infineon
Learn More >
-
-
-
SPD08P06PGBTMA1
Infineon
Trans MOSFET P-CH 60V 8.83A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
Learn More >
-
- View All Newest Products from Omron