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SPP20N60C3XKSA1
Manufacturer:
Mfr. Part #:
SPP20N60C3XKSA1
Allchips #:
Z001-SPP20N60C3XKSA1-1-H-0000-X-N
Description:
MOSFET N-Ch 650V 20.7A TO220-3
ECAD Model:
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Specification
| RoHS | yes |
| Technology | Si |
| Installation style | Through Hole |
| Package / case | TO-220-3 |
| Number of channels | 1 Channel |
| Transistor polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Id - continuous drain current | 20.7 A |
| Rds On - Drain-Source On-Resistance | 190 mOhms |
| Vgs th - gate-source threshold voltage | 3 V |
| Vgs - gate-source voltage | 20 V |
| Qg - gate charge | 87 nC |
| Minimum working temperature | - 55 C |
| The maximum working temperature | + 150 C |
| Configuration | Single |
| Fall time | 4.5 ns |
| Forward transconductance - minimum | 17.5 S |
| Height | 15.65 mm |
| Length | 10 mm |
| Pd - Power Dissipation | 208 W |
| Rise Time | 5 ns |
| Series | CoolMOS C3 |
| Factory packing quantity | 500 |
| Transistor type | 1 N-Channel |
| Typical shutdown delay time | 67 ns |
| Typical turn-on delay time | 10 ns |
| Width | 4.4 mm |
| Unit weight | 6 g |
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