SPP20N60C3XKSA1
In stock
- SPP20N60C3XKSA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-220-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 600 V |
Id - continuous drain current | 20.7 A |
Rds On - Drain-Source On-Resistance | 190 mOhms |
Vgs th - gate-source threshold voltage | 3 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 87 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Fall time | 4.5 ns |
Forward transconductance - minimum | 17.5 S |
Height | 15.65 mm |
Length | 10 mm |
Pd - Power Dissipation | 208 W |
Rise Time | 5 ns |
Series | CoolMOS C3 |
Factory packing quantity | 500 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 67 ns |
Typical turn-on delay time | 10 ns |
Width | 4.4 mm |
Unit weight | 6 g |
SPP20N60C3XKSA1 Documents
Download datasheets and manufacturer documentation for SPP20N60C3XKSA1
Datasheets
Others include "SPP20N60C3XKSA1" parts
The following parts include 'SPP20N60C3XKSA1'
SPP20N60C3XKSA1 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
SPP20N60C3XKSA1
Infineon
MOSFET N-Ch 650V 20.7A TO220-3
Learn More >
-
- View All Newest Products from Omron