L2N7002WT1G
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Specification
Rds On-漏源导通电阻 | 7.5Ω @ 500mA,10V |
晶体管极性 | N沟道 |
Pd-功率耗散 | 225mW |
Id-连续漏极电流 | 115mA |
Vgs - 栅极-源极电压 | 2.5V @ 250uA |
Vds-漏源极击穿电压 | 60V |
封装 | SC-70(SC-70-3) |
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N沟道,60V,115mA,7.5Ω@5V
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L2N7002WT1G
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N沟道,60V,115mA,7.5Ω@5V
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