L2SK3018WT1G
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Specification
晶体管极性 | N沟道 |
Pd-功率耗散 | 200mW(Tc) |
Vds-漏源极击穿电压 | 30V |
Rds On-漏源导通电阻 | 8Ω @ 10mA,4V |
Vgs - 栅极-源极电压 | 1.5V @ 100uA |
封装 | SC-70 |
Id-连续漏极电流 | 100mA |
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N沟道 30V 100mA
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L2SK3018WT1G
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