L8550QLT1G
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Specification
封装 | SOT-23-3 |
Pd-功率耗散 | 225mW |
集电极电流Ic | 800mA |
集电极—发射极最大电压 VCEO | 25V |
晶体管极性 | PNP |
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L8550QLT1G
LRC
PNP,V=-25V,Ic=-800mA,150-300
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L8550QLT1G
LRC
PNP,V=-25V,Ic=-800mA,150-300
Learn More >
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