2N7002DW-TP
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Specification
Id-连续漏极电流 | 115 mA |
Pd-功率耗散 | 200 mW |
宽度 | 1.35 mm |
晶体管极性 | MOSFET |
封装 | SOT-363-6 |
安装方式 | SMD/SMT |
高度 | 1 mm |
电路数量 | 2 Channel |
长度 | 2.2 mm |
Vgs - 栅极-源极电压 | 2.5V @ 250uA |
工作温度范围 | - 55 C~+ 150 C |
Rds On-漏源导通电阻 | 13.5 Ohms |
Vds-漏源极击穿电压 | 60 V |
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