2N6660
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Specification
封装 | TO-39-3 |
Rds On-漏源导通电阻 | 3 Ohms |
Vgs - 栅极-源极电压 | 10 V |
电路数量 | 1 Channel |
晶体管极性 | FET |
Id-连续漏极电流 | 410 mA |
安装方式 | Through Hole |
Pd-功率耗散 | 6.25 W |
工作温度范围 | - 55 C~+ 150 C |
Vds-漏源极击穿电压 | 60 V |
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