BFU550WX
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Specification
Product Category | 射频(RF)双极晶体管 |
Manufacturer | NXP |
RoHS | yes |
Transistor type | Bipolar Wideband |
Technology | Si |
Transistor polarity | NPN |
DC collector / Base Gain hfe Min | 60 |
Collector - Emitter maximum voltage VCEO | 16 V |
Emitter-base voltage VEBO | 2 V |
Continuous collector current | 15 mA |
The maximum working temperature | + 150 C |
Configuration | Single |
Installation style | SMD/SMT |
Package / case | SOT323-3 |
Trademark | NXP Semiconductors |
Collector-base voltage VCBO | 24 V |
DC current gain hFE maximum | 200 |
Gain Bandwidth Product fT | 11 GHz |
Maximum DC collector current | 80 mA |
Minimum working temperature | - 40 C |
working frequency | 900 MHz |
Range of working temperature | - 40 C to + 150 C |
Pd - Power Dissipation | 450 mW |
Factory packing quantity | 3000 |
Types | Wideband RF Transistor |
Unit weight | 5.569 mg |
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