BFU590GX
In stock
- BFU590GX Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
Product Category | 射频(RF)双极晶体管 |
Manufacturer | NXP |
RoHS | yes |
Transistor type | Bipolar Wideband |
Technology | Si |
Transistor polarity | NPN |
DC collector / Base Gain hfe Min | 60 |
Collector - Emitter maximum voltage VCEO | 16 V |
Emitter-base voltage VEBO | 2 V |
Continuous collector current | 80 mA |
The maximum working temperature | + 150 C |
Configuration | Dual |
Installation style | SMD/SMT |
Package / case | SOT223-4 |
Trademark | NXP Semiconductors |
Collector-base voltage VCBO | 24 V |
DC current gain hFE maximum | 130 |
Gain Bandwidth Product fT | 8.5 GHz |
Maximum DC collector current | 300 mA |
Minimum working temperature | - 40 C |
working frequency | 900 MHz |
Range of working temperature | - 40 C to + 150 C |
Pd - Power Dissipation | 2000 mW |
Factory packing quantity | 1000 |
Types | Wideband RF Transistor |
Unit weight | 97.726 mg |
Others include "BFU590GX" parts
The following parts include 'BFU590GX'
BFU590GX Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
BFU590G
NXP Semiconductors
Learn More >
-
-
-
BFU590GX
NXP
RF 晶体管 NPN 12V 200mA 8.5GHz 2W 表面贴装型 SOT-223
Learn More >
-
-
-
BFU590GX
NXP
Trans RF BJT NPN 16V 0.3A 2000mW Automotive AEC-Q101 4-Pin(3+Tab) SC-73 T/R
Learn More >
-
-
-
BFU590GX
NXP
RF 晶体管 NPN 12V 200mA 8.5GHz 2W 表面贴装型 SOT-223
Learn More >
-
-
-
BFU590GX
NXP
RF 晶体管 NPN 12V 200mA 8.5GHz 2W 表面贴装型 SOT-223
Learn More >
-
-
-
BFU590GX
NXP
Trans RF BJT NPN 16V 0.3A 2000mW 4-Pin(3+Tab) SC-73 T/R Automotive AEC-Q101
Learn More >
-
- View All Newest Products from Omron