2SK4177-DL-1E
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Specification
晶体管极性 | MOSFET |
安装方式 | SMD/SMT |
工作温度范围 | - 55 C~+ 150 C |
封装 | TO-263-3 |
Rds On-漏源导通电阻 | 10 Ohms |
电路数量 | 1 Channel |
Vgs - 栅极-源极电压 | 20 V |
Pd-功率耗散 | 80 W |
Qg-栅极电荷 | 37.5 nC |
Id-连续漏极电流 | 2 A |
Vds-漏源极击穿电压 | 1.5 kV |
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表面贴装型 N 通道 1500V 2A(Ta) 80W(Tc) TO-263-2
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