2V7002KT1G
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Specification
Pd-功率耗散 | 420 mW |
电路数量 | 1 Channel |
晶体管极性 | MOSFET |
资格等级 | AEC-Q101 |
Rds On-漏源导通电阻 | 2.5 Ohms |
Id-连续漏极电流 | 380 mA |
Qg-栅极电荷 | 700 pC |
安装方式 | SMD/SMT |
封装 | SOT-23-3 |
Vgs - 栅极-源极电压 | 2.3 V |
Vds-漏源极击穿电压 | 60 V |
工作温度范围 | - 55 C~+ 150 C |
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