BC848BLT1G
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Specification
| 集电极电流Ic | 100mA |
| 封装 | SOT-23-3 |
| 长度 | 2.9 mm |
| 高度 | 0.94 mm |
| 安装方式 | SMD/SMT |
| 晶体管极性 | NPN |
| 集电极—发射极最大电压 VCEO | 30V |
| 宽度 | 1.3 mm |
| 工作温度范围 | - 55 C~+ 150 C |
| Pd-功率耗散 | 300mW |
| 电路数量 | Single |
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NPN,Vceo=30V,Ic=100mA,hfe=200~450
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NPN,Vceo=30V,Ic=100mA,hfe=200~450
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NPN,Vceo=30V,Ic=100mA,hfe=200~450
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Bipolar (BJT) Transistor NPN 30V 100mA 100MHz 300mW Surface Mount SOT-23
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LBC848BLT1G
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三极管(晶体管) LBC848BLT1G SOT-23 NPN Vceo=30V Ic=100mA HFE=200-450
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Bipolar (BJT) Transistor NPN 30V 100mA 100MHz 300mW Surface Mount SOT-23
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LBC848BLT1G
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Device:LBC848BLT1G Device Marking:1K Qualified to AECQ101: DATA SHEET: IC (mA):100 VCEO (V):30 hFE Min:200,450 hFE @IC(mA):2 VCE(sat) Max (V):0.6 VCE(sat) @IC/IB(mA):100/5 fT TYP (MHz):100 Polarity:NPN Package:SOT-23
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