BC857CWT1G
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Specification
安装方式 | SMD/SMT |
晶体管极性 | PNP |
电路数量 | Single |
Pd-功率耗散 | 150mW |
工作温度范围 | - 55 C~+ 150 C |
集电极电流Ic | 100mA |
高度 | 0.85 mm |
长度 | 2.1 mm |
宽度 | 1.24 mm |
封装 | SC-70-3(SOT-323) |
集电极—发射极最大电压 VCEO | 45V |
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Trans GP BJT PNP 45V 0.1A 150mW 3-Pin SC-70 T/R
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PNP,Vceo=-45V,Ic=-100mA
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LBC857CWT1G
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三极管(晶体管) LBC857CWT1G SC-70(SOT-323) PNP Vceo=-45V Ic=-100mA HFE=420-800
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NSVBC857CWT1G
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Bipolar (BJT) Transistor PNP 45V 100mA 100MHz 150mW Surface Mount SC-70-3 (SOT323)
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Bipolar (BJT) Transistor PNP 45V 100mA 100MHz 150mW Surface Mount SC-70-3 (SOT323)
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