BSV52LT1G
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Specification
电路数量 | Single |
晶体管极性 | NPN |
宽度 | 1.3 mm |
Pd-功率耗散 | 225mW |
集电极电流Ic | 100mA |
封装 | SOT-23-3 |
长度 | 2.9 mm |
集电极—发射极最大电压 VCEO | 12V |
安装方式 | SMD/SMT |
工作温度范围 | - 55 C~+ 150 C |
高度 | 0.94 mm |
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BSV52LT1
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NPN,Vceo=12V,Ic=100mA
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Trans GP BJT NPN 12V 0.1A 300mW 3-Pin SOT-23 T/R
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BSV52LT1G
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Trans GP BJT NPN 12V 0.1A 300mW 3-Pin SOT-23 T/R
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