MJD45H11-1G
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Specification
工作温度范围 | - 55 C~+ 150 C |
Pd-功率耗散 | 1.75W |
电路数量 | Single |
晶体管极性 | PNP |
安装方式 | SMD/SMT |
长度 | 6.73 mm |
宽度 | 2.38 mm |
高度 | 6.35 mm |
封装 | TO-251(I-PAK) |
集电极—发射极最大电压 VCEO | 80V |
集电极电流Ic | 8A |
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PNP,Vceo=80V,Ic=8A
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