FCH072N60
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Specification
Pd-功率耗散 | 481 W |
Rds On-漏源导通电阻 | 72 mOhms |
Vgs - 栅极-源极电压 | 20 V, 30 V |
电路数量 | 1 Channel |
晶体管极性 | MOSFET |
长度 | 15.87 mm |
宽度 | 4.82 mm |
工作温度范围 | - 55 C~+ 150 C |
Vds-漏源极击穿电压 | 600 V |
Qg-栅极电荷 | 95 nC |
高度 | 20.82 mm |
封装 | TO-247-3 |
Id-连续漏极电流 | 52 A |
安装方式 | Through Hole |
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