FDB024N08BL7
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Specification
Qg-栅极电荷 | 137 nC |
高度 | 4.7 mm |
工作温度范围 | - 55 C~+ 175 C |
封装 | TO-263-7 |
晶体管极性 | MOSFET |
安装方式 | SMD/SMT |
电路数量 | 1 Channel |
Pd-功率耗散 | 246 W |
Id-连续漏极电流 | 229 A |
长度 | 10.2 mm |
宽度 | 9.4 mm |
Vgs - 栅极-源极电压 | 20 V |
Vds-漏源极击穿电压 | 80 V |
Rds On-漏源导通电阻 | 2.4 mOhms |
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