FDB13AN06A0
Manufacturer:
Mfr. Part #:
FDB13AN06A0
Allchips #:
R001-FDB13AN06A0-4-H-2433-X-N
Description:
Trans MOSFET N-CH 60V 10.9A 3-Pin(2+Tab) D2PAK T/R
ECAD Model:
Delivery:
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Specification
| Rds On-漏源导通电阻 | 11.5 mOhms |
| 封装 | D²PAK（TO-263） |
| 高度 | 4.83 mm |
| 工作温度范围 | - 55 C~+ 175 C |
| 长度 | 10.67 mm |
| 宽度 | 9.65 mm |
| Pd-功率耗散 | 115 W |
| 电路数量 | 1 Channel |
| 安装方式 | SMD/SMT |
| Vgs - 栅极-源极电压 | 20 V |
| Vds-漏源极击穿电压 | 60 V |
| 晶体管极性 | MOSFET |
| Id-连续漏极电流 | 62 A |
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FDB13AN06A0
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Trans MOSFET N-CH 60V 10.9A 3-Pin(2+Tab) D2PAK T/R
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FDB13AN06A0
ON
表面贴装型 N 通道 60V 10.9A（Ta），62A（Tc） 115W（Tc） D²PAK
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