FDB2532-F085
Manufacturer:
Mfr. Part #:
FDB2532-F085
Allchips #:
R001-FDB2532-F085-4-H-1901-X-N
Description:
Trans MOSFET N-CH 150V 8A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
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Specification
封装 | TO-263AB |
电路数量 | 1 Channel |
Vds-漏源极击穿电压 | 150 V |
Qg-栅极电荷 | 82 nC |
高度 | 4.83 mm |
Vgs - 栅极-源极电压 | 20 V |
晶体管极性 | MOSFET |
Pd-功率耗散 | 310 W |
工作温度范围 | -55°C~175°C(TJ) |
Rds On-漏源导通电阻 | 14 mOhms |
安装方式 | SMD/SMT |
Id-连续漏极电流 | 79 A |
长度 | 10.67 mm |
宽度 | 9.65 mm |
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