FDB2532
In stock
- FDB2532 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
电路数量 | 1 Channel |
Vgs - 栅极-源极电压 | 20 V |
晶体管极性 | MOSFET |
Pd-功率耗散 | 310 W |
高度 | 4.83 mm |
Vds-漏源极击穿电压 | 150 V |
安装方式 | SMD/SMT |
封装 | TO-263-3 |
长度 | 10.67 mm |
宽度 | 9.65 mm |
Id-连续漏极电流 | 79 A |
Rds On-漏源导通电阻 | 14 mOhms |
工作温度范围 | - 55 C~+ 175 C |
Others include "FDB2532" parts
The following parts include 'FDB2532'
FDB2532 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
FDB2532
ON
Trans MOSFET N-CH 150V 8A 3-Pin(2+Tab) D2PAK T/R
Learn More >
-
-
-
FDB2532
ON
Trans MOSFET N-CH 150V 8A 3-Pin(2+Tab) D2PAK T/R
Learn More >
-
-
-
FDB2532-F085
ON
Trans MOSFET N-CH 150V 8A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
Learn More >
-
- View All Newest Products from Omron