FDD4N60NZ
Manufacturer:
Mfr. Part #:
FDD4N60NZ
Allchips #:
R001-FDD4N60NZ-4-H-2322-X-N
Description:
Trans MOSFET N-CH 600V 3.4A 3-Pin(2+Tab) DPAK T/R
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Specification
Qg-栅极电荷 | 8.3 nC |
高度 | 2.39 mm |
晶体管极性 | MOSFET |
安装方式 | SMD/SMT |
长度 | 6.73 mm |
宽度 | 6.22 mm |
Pd-功率耗散 | 114 W |
封装 | TO-252AA |
Vds-漏源极击穿电压 | 600 V |
Id-连续漏极电流 | 1.7 A |
Rds On-漏源导通电阻 | 1.9 Ohms |
电路数量 | 1 Channel |
工作温度范围 | - 55 C~+ 150 C |
Vgs - 栅极-源极电压 | 25 V |
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