FDMS0310AS
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Specification
Vgs - 栅极-源极电压 | 20 V |
宽度 | 5 mm |
安装方式 | SMD/SMT |
Qg-栅极电荷 | 27 nC |
晶体管极性 | MOSFET |
工作温度范围 | - 55 C~+ 150 C |
Id-连续漏极电流 | 19 A |
Pd-功率耗散 | 41 W |
长度 | 6 mm |
封装 | PQFN-8(5x6) |
高度 | 1.1 mm |
Rds On-漏源导通电阻 | 3.6 mOhms |
Vds-漏源极击穿电压 | 30 V |
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FDMS0310AS
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Trans MOSFET N-CH Si 30V 19A 8-Pin PQFN EP T/R
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FDMS0310AS
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Trans MOSFET N-CH Si 30V 19A 8-Pin PQFN EP T/R
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表面贴装型 N 通道 30V 19A(Ta),22A(Tc) 2.5W(Ta),41W(Tc) 8-PQFN(5x6)
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FDMS0310AS
ON
Trans MOSFET N-CH Si 30V 19A 8-Pin PQFN EP T/R
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FDMS0310AS
ON
Trans MOSFET N-CH Si 30V 19A 8-Pin PQFN EP T/R
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